Semiconductor device and method for manufacturing the same

ABSTRACT

A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

TECHNICAL FIELD

The present invention relates to a semiconductor device and amanufacturing method thereof.

BACKGROUND ART

Currently, it is important to make a variety of devices such as wirelesschips and sensors into a thinner shape in miniaturizing products, andthe techniques and its application spread rapidly. Since such a varietyof devices which are made thin are flexible to some extent, the devicescan be mounted on an object having a curved surface.

A technique of manufacturing a semiconductor device is proposed, inwhich an element layer including a thin film transistor, which is formedon a glass substrate, is separated from the substrate and transferred toanother base material, for example, a plastic film or the like.

For example, Patent Document 1 (Japanese Published Patent ApplicationNo. 2004-78991) discloses a semiconductor device in which asemiconductor chip with a size of 0.5 mm or less is embedded in paper ora film-like medium, whereby resistance to bending and concentrated loadis improved.

DISCLOSURE OF INVENTION

However, in the case of a semiconductor device with a built-in (on-chip)antenna which is incorporated in a chip, the size of the antenna issmall, and thus, a communication distance is shortened. Further, in thecase where a semiconductor device is manufactured by connecting anantenna provided for paper or a film medium to a chip, a communicationerror occurs when the size of the chip is small.

Accordingly, it is preferable that the size of a chip itself be madelarger in order to prevent a communication error or reduction incommunication distance. However, when the area of the chip is enlarged,a semiconductor device which is transferred to a plastic film or thelike is cracked by local pressing force from the outside, resulting inan operation error.

For example, when a character is written with a writing material on aplastic sheet or paper on a surface of a semiconductor device, writingpressure is applied to the semiconductor device, leading to a problem ofdestruction of the semiconductor device.

A protective material is preferably provided on a surface of thesemiconductor device in order to protect the semiconductor device.However, the provision of the protective material makes the totalthickness of the semiconductor device thicker by the thickness of theprotective material. Moreover, a step of forming the protective materialis additionally required, and manufacturing time and manufacturing costsare increased.

In view of the foregoing problems, objects in the present invention areto manufacture a highly reliable semiconductor device which is notdamaged by local pressing force from the outside with high yield, and toreduce manufacturing steps and manufacturing costs.

In the present invention, a structure (also referred to as a sealinglayer) in which a fiber of an organic compound or an inorganic compoundis impregnated with an organic resin is provided and is subjected tothermocompression bonding, whereby a semiconductor device in which thesealing layer in which the fiber of the organic compound or theinorganic compound is impregnated with the organic resin is fixed to alayer in which a semiconductor element is provided is manufactured.

In addition, the number of layers to which the sealing layer is bondedis reduced, whereby manufacturing steps and manufacturing costs arereduced.

The present invention relates to the following methods for manufacturinga semiconductor device.

One feature of the present invention is a method for manufacturing asemiconductor device as follows. A separation layer and a semiconductorelement layer including a thin film transistor are formed over asubstrate. A conductive resin electrically connected to thesemiconductor element layer is formed over the substrate. A firstsealing layer including a first fiber and a first organic resin layer isformed over the semiconductor element layer and the conductive resin. Agroove is formed in the first sealing layer, the semiconductor elementlayer, and the separation layer. A liquid is dropped into the groove toseparate the separation layer and the semiconductor element layer fromeach other by a physical means. The first sealing layer over theconductive resin is removed to form an opening portion. A set of thefirst sealing layer and the semiconductor element layer is divided intochips. The chips are bonded to an antenna formed over a base material. Asecond sealing layer including a second fiber and a second organic resinlayer is formed so as to cover the antenna and the chips.

In the present invention, in the fiber, the warp yarns and the weftyarns in each of which a plurality of single yarns of an organiccompound or an inorganic compound are bundled may be closely woven.

In the present invention, the fiber may be a woven fabric or a nonwovenfabric.

In the present invention, the fiber may include a polyvinyl alcoholfiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, anaramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber,or a carbon fiber.

In the present invention, the organic resin may comprise a thermosettingresin, a thermoplastic resin, or a UV curable resin.

In the present invention, the thermosetting resin may be an epoxy resin,an unsaturated polyester resin, a polyimide resin, abismaleimide-triazine resin, or a cyanate resin.

In the present invention, the thermoplastic resin may be a polyphenyleneoxide resin, a polyetherimide resin, or a fluorine resin.

In the present invention, the antenna may comprise at least one ofsilver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt),palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti), andaluminum (Al).

In the present invention, the liquid may comprise one of water, alcohol,and carbonated water.

In the present invention, the opening portion may be formed in such amanner that the sealing layer over the conductive resin is removed bylaser beam irradiation.

In the present invention, wavelength of the laser beam may be in anultraviolet region, a visible light region, or an infrared region.

In the present invention, a structure in which a fiber of an organiccompound or an inorganic compound is impregnated with an organic resinis used, whereby a highly reliable semiconductor device which is noteasily damaged by local pressure from the outside can be manufacturedwith high yield.

In addition, when a carbon fiber is used as the fiber so that the fiberis electrically conductive, electrostatic discharge in the semiconductordevice can be reduced.

Further, when carbon particles are dispersed in the organic resin or afiber bundle in the fiber, the semiconductor device can be preventedfrom being destroyed by static electricity. In particular, when anorganic resin or a fiber in which carbon particles are dispersed isprovided at a lower portion of the semiconductor device, electrostaticdischarge in the semiconductor device can be more efficiently reduced.

According to the present invention, a semiconductor device whosemanufacturing steps and manufacturing costs are reduced can be obtained.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1E are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 2A to 2E are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 3A to 3D are cross-sectional views each illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 4A and 4B are top views each illustrating a fiber of the presentinvention;

FIGS. 5A to 5D are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIG. 6 is a cross-sectional view illustrating a method of manufacturingsemiconductor device of the present invention;

FIGS. 7A and 7B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 8A and 8B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIG. 9 is a block diagram illustrating an application example of asemiconductor device of the present invention;

FIGS. 10A to 10E each illustrate an application example of asemiconductor device of the present invention;

FIGS. 11A to 11E each illustrate an electronic device to which asemiconductor device of the present invention can be applied;

FIGS. 12A to 12D are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 13A to 13E are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 14A to 14C are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIGS. 15A and 15B are cross-sectional views each illustrating a methodof manufacturing a semiconductor device of the present invention;

FIGS. 16A and 16B are cross-sectional views each illustrating a methodof manufacturing a semiconductor device of the present invention;

FIG. 17 is a cross-sectional view illustrating a method of manufacturinga semiconductor device of the present invention;

FIGS. 18A and 18B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIG. 19 is a cross-sectional view illustrating a method of manufacturinga semiconductor device of the present invention;

FIGS. 20A and 20B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIG. 21 is a cross-sectional view illustrating a method of manufacturinga semiconductor device of the present invention;

FIGS. 22A and 22B are cross-sectional views illustrating a method ofmanufacturing a semiconductor device of the present invention;

FIG. 23 is a cross-sectional view illustrating a method of manufacturinga semiconductor device of the present invention;

FIG. 24 is a cross-sectional view illustrating a method of manufacturinga semiconductor device of the present invention; and

FIGS. 25A to 25C are cross-sectional views each illustrating a method ofmanufacturing a semiconductor device of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiment modes of the present invention will be describedwith reference to drawings. Note that the present invention can beimplemented in various modes, and it is easily understood by thoseskilled in the art that modes and details can be variously changedwithout departing from the scope and the spirit of the presentinvention. Therefore, the present invention is not construed as beinglimited to description of the embodiment modes. Note that in thedrawings described below, the same portions or portions having similarfunctions are denoted by the same reference numerals, and thedescription thereof will not be repeated.

[Embodiment Mode 1]

This embodiment is described with reference to FIGS. 1A to 1E, FIGS. 2Ato 2E, FIGS. 3A to 3D, FIGS. 4A and 4B, FIGS. 5A to 5D, and FIG. 6.

First, a separation layer 302 is formed over a substrate 301, and then,a semiconductor element layer 303 is formed over the separation layer302 (see FIG. 1A).

As the substrate 301, a glass substrate, a quartz substrate, a ceramicsubstrate, a metal substrate in which an insulating layer is formed onat least one surface, an organic resin substrate, or the like can beused. In this embodiment mode, a glass substrate is used as the glasssubstrate 301.

The separation layer 302 is formed with a single-layer structure or astacked-layer structure, each layer of the single-layer or thestacked-layer has a thickness of 30 to 200 nm and is formed with anelement selected from tungsten (W), molybdenum (Mo), titanium (Ti),tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr),zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),iridium (Ir), or silicon (Si); or an alloy material or a compoundmaterial containing any of the above elements as its main component by asputtering method, a plasma CVD method, a coating method, a printingmethod, or the like. A crystalline structure of a layer containingsilicon may be amorphous, microcrystalline, or polycrystalline. Notethat in this embodiment mode, a coating method refers to a method inwhich a solution is discharged on an object to form a film, andincludes, for example, a spin coating method and a droplet dischargingmethod in its category. Further, a droplet discharging method refers toa method in which droplets of a composition containing fine particlesare discharged through a minute hole to form a pattern with apredetermined shape.

When the separation layer 302 has a single-layer structure, it ispreferable to form a layer containing tungsten, molybdenum, or a mixtureof tungsten and molybdenum. Alternatively, a layer containing oxide oroxynitride of tungsten, a layer containing oxide or oxynitride ofmolybdenum, or a layer containing oxide or oxynitride of a mixture oftungsten and molybdenum is formed. Note that a mixture of tungsten andmolybdenum corresponds to an alloy of tungsten and molybdenum, forexample.

When the separation layer 302 has a stacked-layer structure, it ispreferable to form a metal layer as a first layer and a metal oxidelayer as a second layer. Typically, as the first-metal layer, a layercontaining tungsten, molybdenum, or a mixture of tungsten and molybdenumis formed. As the second layer, a layer containing oxide of tungsten,molybdenum, or a mixture of tungsten and molybdenum; a layer containingnitride of tungsten, molybdenum, or a mixture of tungsten andmolybdenum; a layer containing oxynitride of tungsten, molybdenum, or amixture of tungsten and molybdenum; or a layer containing nitride oxideof tungsten, molybdenum, or a mixture of tungsten and molybdenum isformed.

When the separation layer 302 has a stacked-layer structure in which ametal layer is formed as the first layer and a metal oxide layer isformed as the second layer, the stacked-layer structure may be formed asfollows: a layer containing tungsten is formed as the metal layer, andan insulating layer made of oxide is formed thereover, whereby a layercontaining oxide of tungsten is formed as the metal oxide layer at theinterface between the layer containing tungsten and the insulatinglayer. Moreover, the metal oxide layer may be formed in such a mannerthat the surface of the metal layer is subjected to thermal oxidationtreatment, oxygen plasma treatment, treatment using a solution havingstrong oxidizability, such as ozone water, or the like.

Examples of tungsten oxide include WO₂, W₂O₅, W₄O₁₁, and WO₃.

Although the separation layer 302 is formed so as to be in contact withthe substrate 301 in the above step, the present invention is notlimited to this step. An insulating layer to serve as a base layer maybe formed so as to be in contact with the substrate 301, and theseparation layer 302 may be formed so as to be in contact with theinsulating layer. In this embodiment mode, as the separation layer 302,a tungsten layer with a thickness of 30 to 70 nm is formed by asputtering method.

The thickness of the semiconductor element layer 303 is preferably 1 to10 μM, more preferably 1 to 5 μm. When the semiconductor element layer303 has such a thickness, a semiconductor device capable of being bentcan be formed. Moreover, the area of a top surface of the semiconductordevice is preferably 4 mm² or more, more preferably 9 mm² or more.

As an example of the semiconductor element layer 303, an element layer51 including thin film transistors 52 a and 52 b over an insulatinglayer 56 is shown in FIG. 3A.

The thin film transistors 52 a includes a semiconductor layer 53 aincluding a source region, a drain region, and a channel region, a gateinsulating layer 54, and a gate electrode 55 a. The thin film transistor52 b includes a semiconductor layer 53 b including a source region, adrain region, and a channel region, the gate insulating layer 54, and agate electrode 55 b.

Interlayer insulating films 41 and 42 are formed to cover the thin filmtransistors 52 a and 52 b. Moreover, wirings 57 a and 58 a which are incontact with the source and drain regions in the semiconductor layer 53a, and wirings 57 b and 58 b which are in contact with the source anddrain regions in the semiconductor layer 53 b are formed over theinterlayer insulating film 42. Further, an interlayer insulating film 43is formed.

A typical example of a semiconductor device including such an elementlayer 51 is a microprocessor (MPU) which controls another device orperforms calculation and processing of data. An MPU includes a CPU, amain memory, a controller, an interface, an I/O port, or the like, eachof which can include a thin film transistor, a resistor, a capacitor, awiring, or the like.

When an element layer 61 including a memory element 62 and the thin filmtransistor 52 b is formed as the semiconductor element layer 303, amemory device can be manufactured as the semiconductor device.

Examples of the memory element 62 include a nonvolatile memory elementincluding a floating gate or a charge accumulation layer; a thin filmtransistor and a capacitor which is connected to the thin filmtransistor; a thin film transistor and a capacitor which is connected tothe thin film transistor and includes a ferroelectric layer; and anorganic memory element in which an organic compound layer is interposedbetween a pair of electrodes.

The memory element 62 shown in FIG. 3B is a nonvolatile memory elementincluding the semiconductor layer 53 a, a tunnel insulating layer 64, afloating gate electrode 63, a control insulating layer 65, and thecontrol gate electrode 55 a.

Examples of a semiconductor device including such an element layer 61include memory devices such as a DRAM (dynamic random access memory), anSRAM (static random access memory), a FeRAM (ferroelectric random accessmemory), a mask ROM (read only memory), an EPROM (electricallyprogrammable read only memory), an EEPROM (electrically erasable andprogrammable read only memory), and a flash memory.

FIG. 3C illustrates an example in which an element layer 71 including adiode 72 and the thin film transistor 52 b is formed as thesemiconductor element layer 303.

The diode 72 shown in FIG. 3C includes the wiring 58 b functioning as afirst electrode, a light receiving portion 73, and a second electrode74. The light receiving portion can be formed by using a semiconductorlayer containing amorphous or crystalline silicon. Typical examples ofsuch a semiconductor layer include a silicon layer, a silicon germaniumlayer, or a silicon carbide layer; or a PN junction layer or a PINjunction layer of the above.

As a semiconductor device including such an element layer 71, an opticalsensor, an image sensor, a solar battery, or the like can bemanufactured. Examples of the diode 72 include a PN diode, a PIN diode,an avalanche diode, a Schottky diode, or the like in which amorphoussilicon or polysilicon is used.

When an element layer 81 which includes the thin film transistors 52 aand 52 b, wirings 82 connected to the source and drain regions of thesemiconductor layer in the thin film transistors 52 a and 52 b, and anelectrode 83 electrically connected to the wiring 82 is formed as thesemiconductor element layer 303, an ID tag, an IC tag, an RF (radiofrequency) tag, a wireless tag, an electronic tag, an RFID (radiofrequency identification) tag, an IC card, an ID card, or the like whichcan wirelessly transmit and receive information (hereinafter referred toas RFID) can be manufactured as the semiconductor device (see FIG. 3D).

After the semiconductor element layer 303 is formed, a conductive resin304 which is electrically connected to the wirings 57 a, 57 b, 58 a, and58 b is formed over the semiconductor element layer 303 (see FIG. 1B).For the conductive resin 304, at least one of, that is, one or more ofmetal particles of silver (Ag), gold (Au), copper (Cu), nickel (Ni),platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium(Ti), aluminum (Al), or the like; fine particles of silver halide; ordispersible nanoparticles can be used. In this embodiment mode, as theconductive resin 304, a resin containing silver is formed by a screenprinting method and then hardened at 300° C. for 30 minutes in an airatmosphere.

Next, a sealing layer 305 including a fiber 113 and an organic resinlayer 114 is formed over the semiconductor element layer 303 and theconductive resin 304 (see FIG. 1C).

The fiber 113 is a woven fabric or a nonwoven fabric using ahigh-strength fiber of an organic compound or an inorganic compound. Thehigh-strength fiber is specifically a fiber with a high tensile modulusof elasticity or a fiber with a high Young's modulus. Typical examplesof the high-strength fiber include a polyvinyl alcohol fiber, apolyester fiber, a polyimide fiber, a polyethylene fiber, an aramidfiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and acarbon fiber. As the glass fiber, a glass fiber using E glass, S glass,D glass, Q glass, or the like can be used. Note that the fiber 113 maybe formed from one kind or a plurality of the above-describedhigh-strength fibers.

When a carbon fiber is used as the fiber 113 so hat the fiber 113 iselectrically conductive, electrostatic discharge can be reduced.

Alternatively, the fiber 113 may be a woven fabric formed using bundlesof fibers (single yarns) (hereinafter also referred to as fiber bundles)for the warp yarn and the weft yarn, or a nonwoven fabric obtained bystacking bundles of plural kinds of fibers in a random manner or in onedirection. In the case of a woven fabric, a plain-woven fabric, atwilled fabric, a satin-woven fabric, or the like can be used asappropriate.

The fiber bundle may have a cross section of a circular shape or anelliptical shape. As the bundle of fibers, a bundle of fibers which hasbeen subjected to fiber opening with a high-pressure water stream,high-frequency vibration using liquid as a medium, continuous ultrasonicvibration, pressing with a roller, or the like may be used. A bundle offibers which is subjected to fiber opening has a large width, has asmaller number of single yarns in the thickness direction, and has across section of an elliptical shape or a flat shape. Further, when aloosely twisted yarn is used as the bundle of fibers, the fiber bundleis easily flattened and has a cross section of an elliptical shape or aflat shape. By using a fiber bundle having a cross section of anelliptical shape or a flat shape as described above, it is possible tomake the fiber 113 thinner. Accordingly, the sealing layer 305 can bemade thinner, and thus, a thin semiconductor device can be manufactured.Although the diameter of the fiber bundle is preferably 4 to 400 μm,more preferably 4 to 200 μm, it is theoretically possible that thediameter of the fiber bundle is even smaller. Moreover, although thethickness of the fiber is preferably 4 to 20 μm, it is theoreticallypossible that the thickness of the fiber is even smaller, and thethickness of the fiber depends on a material of the fiber.

FIGS. 4A and 4B each are a top view of the fiber 113 which is a wovenfabric formed by using bundles of fibers for the warp yarn and the weftyarn.

As shown in FIG. 4A, the fiber 113 is woven using warp yarns 113 aspaced at regular intervals and weft yarns 113 b spaced at regularintervals. Such a fiber has regions without the warp yarns 113 a and theweft yarns 113 b (referred to as basket holes 113 c). Such a fiber 113is further impregnated with an organic resin; thus, adhesion between thefiber 113 and the element layer can be increased.

As shown in FIG. 4B, in the fiber 113, the density of the warp yarns 113a and the weft yarns 113 b may be high and the proportion of the basketholes 113 c may be low. Typically, the area of the basket hole 113 c ispreferably smaller than that of a locally pressed portion, andpreferably has a rectangular shape having a side with a length of 0.01to 0.2 mm. When the basket hole 113 c in the fiber 113 has such a smallarea, pressure can be absorbed by the entire fiber 113 even if the fiber113 is pressed by a member with a sharp tip (typically, a writingmaterial such as a pen or a pencil).

Further, in order to enhance permeability of an organic resin into theinside of the bundle of fibers, the fiber may be subjected to surfacetreatment. Examples of the surface treatment include corona discharge,plasma discharge, and the like for activating a surface of the fiber aswell as surface treatment using a silane coupling agent or a titanatecoupling agent.

For the organic resin layer 114 which is impregnated into the fiber 113and seals a surface of the semiconductor element layer 303, athermosetting resin such as an epoxy resin, an unsaturated polyesterresin, a polyimide resin, a bismaleimide-triazine resin, or a cyanateresin; a thermoplastic resin such as a polyphenylene oxide resin, apolyetherimide resin, or a fluorine resin; a plurality of theabove-described thermosetting resins and the thermoplastic resins; a UVcurable resin; or an organic plastic resin can be used. By using theabove-described organic resin, the fiber 113 can be fixed to thesemiconductor element layer 303 by heat treatment. Note that the higherthe glass transition temperature of the organic resin layer 114 is, theless the organic resin layer 114 is damaged by local pressing force,which is preferable.

In addition, the thickness of the sealing layer 305 is preferably 10 to100 μm, more preferably 10 to 30 μm. When the structure having such athickness is used, a thin semiconductor device capable of being bent canbe formed.

Highly thermally conductive filler may be dispersed in the organic resinlayer 114 or in the bundles of fibers of the fiber 113. Examples of thehighly thermally conductive filler include aluminum nitride, boronnitride, silicon nitride, alumina, and metal particles of silver,copper, or the like. When the highly thermally conductive filler isincluded in the organic resin or in the bundles of fibers, heatgenerated in the element layer can be easily released to the outside.Accordingly, thermal storage in the semiconductor device can besuppressed, and destruction of the semiconductor device can be reduced.

Alternatively, carbon particles may be dispersed in the organic resinlayer 114 or a bundle of fibers in the fiber 113. In particular, when athin film transistor is included in the semiconductor element layer 303,the sealing layer 305 including the organic resin layer 114 or the fiber113 in which the carbon particles are dispersed is provided below theTFT, the TFT can be prevented from being destroyed by staticelectricity.

FIG. 5A is a cross-sectional view in the case where the element layer 51shown in FIG. 3A is used as the semiconductor element layer 303. In FIG.5A, the fiber 113 is shown as a woven fabric which is plain-woven usingfiber bundles each having a cross section of an elliptical shape.Moreover, the thin film transistors 52 a and 52 b are larger than thefiber bundle of the fiber 113; however, the thin film transistors 52 aand 52 b may be smaller than the fiber bundle of the fiber 113 in somecases.

Further, the conductive resin 304 is electrically connected to thewirings 57 a, 57 b, 58 a, and 58 b.

In this embodiment mode, in order to fix the sealing layer 305 to thesemiconductor element layer 303, the sealing layer 305 is provided overthe semiconductor element layer 303 and after that, a first press stepand a second press step are performed.

First, the first press step (a vacuum press step) is performed in orderto remove bubbles entering between the sealing layer 305 and thesemiconductor element layer 303 and to temporarily fix the sealing layer305. In this embodiment mode, the first press step is performed in sucha manner that the temperature is raised from a room temperature to 100°C. in 30 minutes in a vacuum atmosphere.

Next, the second press step is performed in order to uniformly fix thesealing layer 305 to the semiconductor element layer 303. In theembodiment mode, as the second press step, the temperature is held at135 ° C. under a pressure of 0.3 MPa for 15 minutes, and after that, thetemperature is raised to 195° C. and held for 60 minutes.

Next, as shown in FIG. 1D, grooves 306 are fanned in the sealing layer305, the semiconductor element layer 303, and the separation layer 302by laser beam irradiation or cutting with an edged tool.

As a laser beam to be emitted to form the groove 306, it is preferableto use a laser beam having a wavelength which is absorbed by any of theseparation layer 302, the semiconductor element layer 303, and thesealing layer 305. Typically, a laser beam in an ultraviolet region, avisible light region, or an infrared region is selected as appropriateto perform irradiation.

As a laser capable of emitting such a laser beam, any of the followinglasers can be used: an excimer laser such as a KrF, ArF, or XeCl laser;a gas laser such as a He, He—Cd, Ar, He—Ne, HE or CO₂ laser; asolid-state laser such as a crystal laser using crystals such as YAG,GdVO₄, YVO₄, YLF, or YAlO₃ which are doped with Cr, Nd, Er, Ho, Ce, Co,Ti, or Tm, a glass laser, or a ruby laser; or a semiconductor laser suchas a GaN, GaAs, GaAlAs, or InGaAsP laser. Note that a fundamental waveto a fifth harmonic are preferably used in a solid-state laser asappropriate.

When the groove 306 is formed with the edged tool, a cutter knife or thelike may be used as the edged tool.

In this embodiment mode, the groove 306 is formed using a UV laser. FIG.5B is a cross-sectional view in the case where the element layer 51shown in FIG. 3A is used as the semiconductor element layer 303.

Next, as shown in FIG. 1D, a liquid is dropped into the grooves 306, andthe separation layer 302 and the semiconductor element layer 303 areseparated from each other by a physical means. The physical means refersto a dynamic means or a mechanical means, for example, a means forchanging some dynamical energy (mechanical energy). Typically, thephysical means is to apply mechanical force (e.g., a peeling processwith human hands or with a gripper, or a separation process by rotatinga roller). At this time, when an adhesive sheet which can be separatedby light or heat is provided on a surface of the sealing layer 305,separation can be performed more easily. The adhesive sheet may bebonded by a mechanical means or a human means described above. Note thatwhen bubbles enter between the sealant sheet and the sealing layer 305,a separation defect might occur in transfer; therefore, bubbles shouldbe prevented from entering.

In this embodiment mode, water, for example, pure water is used as theliquid, and a roller 307 is rotated over the sealing layer 305, wherebythe semiconductor element layer 303, the conductive resin 304, and thesealing layer 305 are transferred to the roller 307 (see FIG. 1E).

Any liquid can be used as long as it is volatile and does not damage theseparation layer 302. By addition of the liquid, generation of staticelectricity in a separation step which is performed later can besuppressed, and a chip can be prevented from being damaged by staticelectricity. Accordingly, any liquid that has an insulating property tosome extent and does not adversely affect the semiconductor elementlayer 303 can be used.

For example, other than pure water, one or a mixture of alcohol such asethanol, carbonated water, or the like; or a liquid containing at leastone of the above liquids may be used. Moreover, in this embodiment mode,a rubber roller having a diameter of 300 mm is used as the roller 307.

When the separation layer 302 and the semiconductor element layer 303are separated from each other by dropping the liquid into the grooves306, generation of static electricity in separation can be prevented,and damage to the semiconductor element layer 303 can be suppressed.Thus, operation yield is drastically improved.

Next, in order to connect the semiconductor element layer 303 and theoutside, the sealing layer 305 over the conductive resin 304 is removedto form an opening portion 312. The sealing layer 305 is removed bybeing irradiated with a laser beam 313 (see FIG. 2A).

Typically, the laser beam 313 may be selected from a laser beam in anultraviolet region, a visible light region, or an infrared region asappropriate.

As a laser capable of emitting such a laser beam 313, any of thefollowing lasers can be used: an excimer laser such as a KrF, ArF, orXeCl laser; a gas laser such as a He, He—Cd, Ar, He—Ne, HF, or CO₂laser; a solid-state laser such as a crystal laser using crystals suchas YAG, GdVO₄, YVO₄, YLF, or YAlO₃ which are doped with Cr, Nd, Er, Ho,Ce, Co, Ti, or Tin, a glass laser, or a ruby laser; or a semiconductorlaser such as a GaN, GaAs, GaAlAs, or InGaAsP laser. Note that afundamental wave to a fifth harmonic are preferably used in asolid-state laser as appropriate.

In this embodiment mode, the laser beam 313 of a YAG laser with awavelength of 355 nm, and nine shots of laser irradiation with, a slitsize of 150 μm square are performed per one conductive resin 304,whereby the sealing layer 305 is removed, and the opening portion 312 isformed.

In this embodiment mode, since the sealing layer 305 over the regionwhere the conductive resin 304 is formed is irradiated with the laserbeam 313, the laser beam 313 is blocked by the conductive resin 304 anddoes not reach the semiconductor element layer 303. That is, thesemiconductor element layer 303 is not irradiated with the laser beam313, and damage to the semiconductor element layer 303 can besuppressed.

Note that even when the sealing layer 305 over the conductive resin 304is irradiated with the laser beam 313, the sealing layer 305 is notcompletely removed, and the fiber 113 remains in the opening portion312. In a later step, a conductive adhesive material 315 is formed inthe opening portion 312. Since the fiber 113 remains in the openingportion 312, the conductive adhesive material 315 is more firmly bonded,and physical strength can be improved. Thus, resistance to bending canbe improved.

Next, the sealing layer 305 and the semiconductor element layer 303 areirradiated with a laser beam, and grooves 314 are formed. A set of thesealing layer 305 and the semiconductor element layer 303 is dividedinto chips 321, using the grooves 314 (see FIG. 2B).

In this embodiment mode, the grooves 314 are for rued using a UV laserbeam as the laser beam. The size of each of the sealing layer 305 andthe semiconductor element layer 303 before the division is 120 mm×100mm, and the size of the chip 321 formed after the division is 10 mm×10mm.

FIG. 5C is a cross-sectional view in the case where the element layer 51shown in FIG. 3A is used as the semiconductor element layer 303.

After the division into individual chips 321, the conductive adhesivematerial 315 which is electrically connected to the conductive resin 304is formed in the opening portion 312, and an adhesive material 316 isformed on a surface of the sealing layer 305, which is not provided withthe conductive adhesive material 315 (see FIG. 2C). In this embodimentmode, a conductive adhesive material containing silver is used as theconductive adhesive material 315. FIG. 5D is a cross-sectional view inthe case where the element layer 51 shown in FIG. 3A is used as thesemiconductor element layer 303.

Next, an external antenna 317 is formed on a substrate 318.

The antenna 317 is formed in such a manner that droplets or a pastecontaining at least one of, that is, one or more of metal particles ofsilver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt),palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti), aluminum(Al), or the like is/are discharged onto the substrate 318 by a dropletdischarging method (such as an inkjet method or a dispenser method) andthen dried and baked. The antenna is formed by a droplet dischargingmethod, whereby the number of steps in forming the antenna can bereduced, and accordingly, cost of manufacturing the antenna can bereduced.

Alternatively, the antenna 317 may be formed by a screen printingmethod. When a screen printing method is used, as a material of theantenna 317, a conductive paste in which conductive particles eachhaving a diameter of several nanometers to several tens of micrometersare dissolved or dispersed in an organic resin is selectively printed.As the conductive particle, at least one of, that is, one or more ofmetal particles of silver (Ag), gold (Au), copper (Cu), nickel (Ni),platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium(Ti), aluminum (Al), or the like; fine particles of silver halide; ordispersible nanoparticles can be used. Moreover, for the organic resinincluded in the conductive paste, one or more of organic resins selectedfrom organic resins which functions as binders, solvents, dispersants,or coating materials of metal particles can be used. Typically, organicresins such as an epoxy resin and a silicone resin can be employed.

Further alternatively, the antenna 317 may be formed by gravure printingother than a screen printing method, or can be formed by using aconductive material by a plating method, a sputtering method, or thelike.

In this embodiment mode, the antenna 317 is formed by copper plating.

As the substrate 318, a film, paper, or the like may be used, or asealing layer having the same structure as the sealing layer 305 may beused. When a film is used as the substrate 318, an organic film such asan aramid film, a polyethylene naphthalate (PEN) film, a polyethyleneterephthalate (PET) film, or a polyethersulfone (PES) may be used.

The chip 321 is bonded to the antenna 317 with the adhesive material 316(see FIG. 2D). The semiconductor element layer 303 is electricallyconnected to the antenna 317 through the conductive resin 304 and theconductive adhesive material 315.

In this embodiment mode, an aramid film is used as the substrate 318.

Next, a sealing layer 323 is bonded to the chip 321 and the antenna 317so as to cover the chip 321 and the antenna 317 (see FIG. 2E). In thisembodiment mode, a layer having the same structure as the sealing layer305 is used as the sealing layer 323 (see FIG. 6). That is, the sealinglayer in which a fiber 324 is impregnated with an organic resin layer325 is used.

In the present invention, the sealing layer 305 is formed over thesemiconductor element layer 303, and the sealing layer 323 is formed ona surface which does not face the sealing layer 305, that is, a surfaceon which the conductive resin 304 is not formed, whereby a semiconductordevice with high withstand voltage and with the reduced number ofmanufacturing steps can be manufactured.

Further, the organic resin layer 325 in the sealing layer 323 is bondedto a gap between the antenna 317 and the chip 321, and a cross sectionof the chip 321, whereby adhesion is improved.

As described above, a semiconductor device in this embodiment mode canbe obtained. According to this embodiment mode, a sealing layer that ishighly resistant to external pressure can be formed even through fewermanufacturing steps. Since the semiconductor device obtained through thesteps in this embodiment mode includes a sealing layer in which a fiberis impregnated with an organic resin, a highly reliable semiconductordevice which is not easily damaged by local pressure from the outsidecan be manufactured with high yield.

[Embodiment Mode 2]

In this embodiment mode, an example in which a sealing layer is formedby a manufacturing method different from that in Embodiment Mode 1 isdescribed with reference to FIGS. 7A and 7B and FIGS. 8A and 8B.

First, the manufacturing steps up to and including the step of formationof the conductive resin 304 (see FIGS. 1A and 1B) are performed based onEmbodiment Mode 1. Next, the fiber 113 is provided over thesemiconductor element layer 303 (see FIG. 7A).

Then, the organic resin layer 114 is formed over the fiber 113 and thesemiconductor element layer 303. At this time, the fiber 113 isimpregnated with an organic resin in the organic resin layer 114. Thatis, the fiber 113 is included in the organic resin layer 114.Accordingly, adhesion between the fiber 113 and the organic resin layer114 is increased.

Next, the organic resin layer 114 is heated so that the organic resin inthe organic resin layer 114 is plasticized or cured. Note that when theorganic resin is an organic plastic resin, the organic resin which isplasticized is then cured by cooling the organic resin to a roomtemperature. Alternatively, when the organic resin is a UV curableresin, it is cured by UV irradiation.

Thus, as shown in FIG. 7B, the organic resin layer 114 which isimpregnated into the fiber 113 and fixed to one surface of thesemiconductor element layer 303 is formed. Note that the organic resinlayer 114 and the fiber 113 which are fixed to one surface of thesemiconductor element layer 303 serve as the sealing layer 305.Accordingly, a structure similar to that shown in FIG. 1B can beobtained.

Further, the steps in FIGS. 1D and 1E and FIGS. 2A to 2D are performed.

Next, the fiber 324 is provided on surfaces of the chip 321 and theantenna 317 (see FIG. 8A). The sealing layer 323 is obtained in a mannersimilar to the sealing layer 305 such that the fiber 324 is impregnatedwith the organic resin in the organic resin layer 325 and the organicresin is hardened (see FIG. 8B). Accordingly, a structure similar tothat shown in FIG. 2E can be obtained.

According to this embodiment mode, a sealing layer that is highlyresistant external pressure can be formed even through fewermanufacturing steps.

In this embodiment mode, the thickness of the organic resin layer 114 orthe organic resin layer 325 can be changed, and accordingly, thethickness of the sealing layer 305 or the sealing layer 323 can also bechanged. For example, the sealing layers 305 and 323 that are thinnerthan the sealing layers 305 and 323 in Embodiment Mode 1 can beobtained. Thus, the total thickness of the semiconductor device can bereduced.

[Embodiment Mode 3]

In this embodiment mode, an application example of a semiconductordevice of the present invention is described. In this embodiment mode,an RFID is described as one application example of the semiconductordevice.

First, a circuit structure example of an RFID 501 to which thesemiconductor devices of the present invention is applied is described.FIG. 9 is a block circuit diagram of the RFID 501.

The RFID 501 in FIG. 9 conforms to specifications of ISO 15693 of theInternational Organization for Standardization, and it is a vicinitytype and has a communication signal frequency of 13.56 MHz. Moreover,reception only responds to a data reading instruction, a datatransmission rate in transmission is approximately 13 kHz, and theManchester code is used for a data encoding format.

A circuit portion 412 of the RFID 501 is roughly divided into a powersupply portion 460 and a signal processing portion 461. The power supplyportion 460 includes a rectifier circuit 462 and a storage capacitor463. Further, the power supply portion 460 may be provided with aprotection circuit portion (also referred to as a limiter circuitportion) for protecting the internal circuit when the amount of electricpower received by an antenna 411 is too high, and a protection circuitcontrol circuit portion for controlling whether or not to operate theprotection circuit portion. The provision of the circuit portions canprevent malfunction caused when a large amount of electric power isreceived by the RFID under the situation in which a communication rangebetween the RFID and a communication device is extremely short, forexample. Thus, the reliability of the RFID can be improved. That is, theRFID can be normally operated without degradation of an element in theRFID or destruction of the RFID itself.

The circuit portion 412 is formed in the chip 321 described inEmbodiment Modes 1 and 2.

Note that in this embodiment mode, a communication device may have ameans to transmit and receive information to/from the RFID by wirelesscommunication. Examples of the communication device include a readerwhich reads information; a reader/writer which has a function of readingand a function of writing; and a mobile phone, a computer, and the likewhich have one of or both the function of reading and the function ofwriting.

The rectifier circuit 462 rectifies a carrier wave received by theantenna 411 and generates DC voltage. The storage capacitor 463 smoothesthe DC voltage generated in the rectifier circuit 462. The DC voltagegenerated in the power supply portion 460 is supplied to each circuit inthe signal processing portion 461 as power supply voltage.

The signal processing portion 461 includes a demodulation circuit 464, aclock generation/correction circuit 465, a recognition/determinationcircuit 466, a memory controller 467, a mask ROM 468, an encodingcircuit 469, and a modulation circuit 470.

The demodulation circuit 464 is a circuit which demodulates a signalreceived by the antenna 411. The received signal which is demodulated bythe demodulation circuit 464 is inputted to the clockgeneration/correction circuit 465 and the recognition/determinationcircuit 466.

The clock generation/correction circuit 465 generates a clock signalwhich is necessary for operating the signal processing portion 461, andalso has a function of correcting the clock signal. For example, theclock generation/correction circuit 465 includes a voltage controlledoscillator circuit (hereinafter referred to as a VCO circuit), employsan output of the VCO circuit as a feedback signal, compares a phasebetween a supplied signal and the feedback signal, and adjusts an outputsignal by using negative feedback so that the signal to be inputted andthe feedback signal have a certain phase.

The recognition/determination circuit 466 recognizes and determines aninstruction code. The instruction code recognized and determined by therecognition/determination circuit 466 is an end-of-frame (EOF) signal, astart-of-frame (SOF) signal, a flag, a command code, a mask length, amask value, or the like. Moreover, the recognition/determination circuit466 has a cyclic redundancy check (CRC) function that identifies atransmission error.

The memory controller 467 reads data from the mask ROM 468 in responseto a signal processed by the recognition/determination circuit 466. AnID or the like is stored in the mask ROM 468. The mask ROM 468 ismounted on a RFID, whereby the read-only RFID 501 in which data isincapable of being replicated or altered is formed. When the read-onlyRFID 501 is embedded in paper, forgery prevention paper can be obtained.

The encoding circuit 469 encodes the data which is read from the maskROM 468 by the memory controller 467. The encoded data is modulated bythe modulation circuit 470. The data modulated by the modulation circuit470 is transmitted from the antenna 411 as a carrier wave.

Next, usage examples of an RFID are described. An RFID of the presentinvention can be used for a variety of paper media and film media. Inparticular, the RFID of the present invention can be used for a varietyof paper media for which forgery prevention is necessary. Examples ofthe paper media include banknotes, family registers, residencecertificates, passports, licenses, identification cards, membershipcards, expert opinions in writing, patient's registration cards,commuter passes, promissory notes, checks, carriage notes, cargocertificates, warehouse certificates, stock certificates, bondcertificates, gift certificates, tickets, and deeds of mortgage.

Further, by implementation of the present invention, a lot moreinformation than that which is visually shown on a paper medium can beheld in the paper medium or the film medium. Accordingly, when the RFIDof the present invention is applied to a product label or the like,development of an electronic system for merchandise management orprevention of product theft can be realized. Usage examples of the paperaccording to the. present invention are described below with referenceto FIGS. 10A to 10E.

FIG. 10A illustrates an example of a bearer bond 511 including paperembedded with the RFID 501 of the present invention. The bearer bond 511includes, but is not limited to, a stamp, a ticket, an admission ticket,a gift certificate, a book coupon, a stationery coupon, a beer coupon, arice coupon, a variety of gift coupons, and a variety of service couponsin its category. Further, FIG. 10B illustrates an example of acertificate 512 (e.g., a residence certificate or a family register)including the paper embedded with the RFID 501 of the present invention.

FIG. 10C illustrates an example in which the RFID of the presentinvention is applied to a label. Over a label base (separate paper) 513,a label (an ID sticker) 514 is formed using the paper embedded with theRFID 501. The label 514 is stored in a box 515. On the label 514,information regarding a product or a service (such as product name,brand, trademark, trademark owner, seller, or manufacturer) is printed.Moreover, a unique ID number of the product (or a category of theproduct) is stored in the RFID 501, whereby forgery, infringement ofintellectual property rights such as a trademark right or a patentright, and illegal activity such as unfair competition can be spottedeasily. The RFID 501 can be inputted with a large amount of informationthat cannot all be written on a container or a label of the product,such as home of the production, area of sales, quality, raw material,effect, use, quantity, shape, price, production method, usage method,time of production, time of use, expiration date, instruction manual,and intellectual property information relating to the product, forexample. Accordingly, a transactor or a consumer can access suchinformation with a simple communication device. Further, the informationcan easily be rewritten and erased, for example, by a producer, butcannot be rewritten and erased, for example, by the transactor or theconsumer.

FIG. 10D illustrates a tag 516 formed by using paper or a film which isembedded with the RFID 501. The tag 516 is formed by using the paper orthe film which is embedded with the RFID 501, whereby the tag can bemanufactured less expensively than a conventional ID tag using a plastichousing. FIG. 10E illustrates a book 517 in which the RFID of thepresent invention is used for a cover of the book 517. The RFID 501 isembedded in the cover.

The label 514 or the tag 516 mounted with the RFID, which is an exampleof the semiconductor device of the present invention, is bonded to theproduct, whereby merchandise management becomes easy. For example, whenthe product is stolen, the perpetrator can be spotted quickly byfollowing a route of the product. In such a manner, when the RFID of thepresent invention is used as an ID tag, historical management of theproduct's raw material, area of production, manufacturing andprocessing, distribution, sales, and the like as well as trackinginquiry becomes possible. That is, the product can be traceable.Moreover, by the present invention, a tracing management system of theproduct can be obtained at lower cost than before.

The RFID, which is an example of the semiconductor device of the presentinvention, is not easily damaged by local pressing force. Accordingly, apaper medium and a film medium each including the RFID, which is anexample of the semiconductor device of the present invention, can bebent in process of attachment, setting, or the like, leading toimprovement in work efficiency. Further, since information can bewritten with a writing material to a paper medium and a film medium eachincluding the RFID, which is an example of the semiconductor device ofthe present invention, the range of uses of the RFID is expanded.

[Embodiment Mode 4]

In this embodiment mode, an electronic device provided with the RFID inEmbodiment Mode 3 is described below.

Examples of electronic devices provided with the RFID in Embodiment Mode3 include cameras such as video cameras and digital cameras, goggledisplays (head mounted displays), navigation systems, audio reproducingdevices (e.g., car audio and audio component sets), computers, gamemachines, portable information terminals (e.g., mobile computers, mobilephones, portable game machines, and e-book readers), and imagereproducing devices provided with storage media (specifically, a devicefor reproducing the content of a storage medium such as a DVD (digitalversatile disc) and having a display for displaying the reproducedimage). FIGS. 11A to 11E illustrate specific examples of such electronicdevices.

FIGS. 11A and 11B illustrate a digital camera. FIG. 11B illustrates therear side of the digital camera in FIG. 11A. The digital camera includesa housing 2111, a display portion 2112, a lens 2113, operating keys2114, a shutter button 2115, and the like. A semiconductor device 2116of the present invention, which has a function as a memory device, anMPU, an image sensor, or the like, is provided inside the housing 2111.

FIG. 11C illustrates a mobile phone, which is one typical example ofportable terminals. The mobile phone includes a housing 2121, a displayportion 2122, operating keys 2123, an optical sensor 2124, and the like.A semiconductor device 2125 of the present invention, which has afunction as a memory device, an MPU, an image sensor, or the like, isprovided inside the mobile phone.

FIG. 11D illustrates a digital player, which is one typical example ofaudio devices. The digital player shown in FIG. 11D includes a main body2130, a display portion 2131, a semiconductor device 2132 of the presentinvention, which has a function as a memory device, an MPU, an imagesensor, or the like, an operation portion 2133, earphones 2134, and thelike.

FIG. 11E illustrates an e-book reader (also referred to as electronicpaper). The e-book reader includes a main body 2141, a display portion2142, operating keys 2143, and a semiconductor device 2111 of thepresent invention, which has a function as a memory device, an MPU, animage sensor, or the like. Further, a modem may be incorporated in themain body 2141, or a structure capable of wirelessly transmitting andreceiving information may be employed.

As described above, the applicable range of the semiconductor device ofthe present invention is so wide that the semiconductor device can beapplied to other electronic devices.

[Embodiment Mode 5]

In this embodiment mode, a semiconductor device having a structuredifferent from the structures in Embodiment Modes 1 and 2 is described.Moreover, a semiconductor device in this embodiment mode can also beapplied to Embodiment Modes 3 and 4.

The semiconductor device in this embodiment mode and a manufacturingmethod thereof are described with reference to FIGS. 12A. to 12D, FIGS.13A to 13E, FIGS. 14A to 14C, FIGS. 15A and 15B, FIGS. 16A and 16B, FIG.17, FIGS. 18A and 18B, FIG. 19, FIGS. 20A and 20B, FIG. 21, FIGS. 22Aand 22B, FIG. 23, and FIG. 24.

First, an insulating film 602 and a base film 603 including a lower basefilm 603 a and an upper base film 603 b are formed (see FIG. 12B) over asubstrate 600 including a separation layer 601 (see FIG. 12A).

A material similar to the substrate 301 may used for the substrate 600.A material similar to the separation layer 302 may be used for theseparation layer 601. In this embodiment mode, a glass substrate is usedas the substrate 600, and a tungsten layer is used as the separationlayer 601.

The insulating film 602 may be one of a silicon oxide film, a siliconoxide film containing nitrogen, a silicon nitride film, and a siliconnitride film containing oxygen; or a stacked layer of two or more of theabove films. In this embodiment mode, a silicon oxide film containingnitrogen is formed as the insulating film 602.

As the base film 603, a stacked layer formed with two or more of asilicon oxide film, a silicon oxide film containing nitrogen, a siliconnitride film, and a silicon nitride film containing oxygen is used. Inthis embodiment mode, a silicon nitride film containing oxygen is formedas the lower base film 603 a, and a silicon oxide film containingnitrogen is formed as the upper base film 603 b.

Next, a semiconductor film is formed over the base film 603 and isetched to Form an island-shaped semiconductor film 611 and anisland-shaped semiconductor film 612 (see FIG. 12C).

Then, a gate insulating film 607 is formed to cover the base film 603and the island-shaped semiconductor films 611 and 612 (see FIG. 12D).

As the gate insulating film 607, one of a silicon oxide film, a siliconoxide film containing nitrogen, a silicon nitride film, and a siliconnitride film containing oxygen; or a stacked layer of two or more of theabove films may be used. In this embodiment mode, a silicon oxide filmcontaining nitrogen is formed as the gate insulating film 607.

A gate electrode 613 is formed over the island-shaped semiconductor film611 with the gate insulating film 607 interposed therebetween, and agate electrode 614 is formed over the island-shaped semiconductor film612 with the gate insulating film 607 interposed therebetween. In thisembodiment mode, a stacked layer of a tantalum nitride film and atungsten film is used for the gate electrodes 613 and 614.

Next, an impurity element imparting one conductivity type is added toeach of the island-shaped semiconductor films 611 and 612 using the gateelectrodes 613 and 614 as masks, whereby a channel formation region, asource region, and a drain region are formed in each of theisland-shaped semiconductor films 611 and 612.

As the impurity element imparting one conductivity type, phosphorus (P)or arsenic (As) may be used in the case of an impurity element impartingn-type conductivity, and boron (B) may be used in the case of animpurity element imparting p-type conductivity.

An impurity element imparting the same conductivity type may be added toeach of the island-shaped semiconductor films 611 and 612, or animpurity element imparting a different conductivity type may be added toeach of the island-shaped semiconductor films 611 and 612.

Next, a passivation film 608 is formed to cover the base film 603, thegate insulating film 607, and the gate electrodes 613 and 614 (see FIG.13A). As the passivation film 608, one of a silicon oxide film, asilicon oxide film containing nitrogen, a silicon nitride film, and asilicon nitride film containing oxygen; or a stacked layer of two ormore of the above films may be used. In this embodiment mode, a siliconoxide film containing nitrogen is formed as the passivation film 608.

Then, the base film 603, the gate insulating film 607, and thepassivation film 608 are etched (see FIG. 13B).

Next, an interlayer insulating film 609 is formed to cover the base film603, the gate insulating film 607, and the passivation film 608 whichhave been etched (see FIG. 13C). In this embodiment mode, a siliconnitride film containing oxygen is formed as the interlayer insulatingfilm 609.

Then, an interlayer insulating film 616 is formed over the interlayerinsulating film 609 (see FIG. 13D), In this embodiment mode, a siliconoxide film containing nitrogen is formed as the interlayer insulatingfilm 616.

Over the interlayer insulating film 616, an electrode 621 which iselectrically connected to one of the source region and the drain regionof the island-shaped semiconductor film 611, an electrode 622 which iselectrically connected to the gate electrode 613, and an electrode 623which is electrically connected to the other of the source region andthe drain region of the island-shaped semiconductor film 611 are Formed.Further, over the interlayer insulating film 616, an electrode 625 whichis electrically connected to one of the source region and the drainregion of the island-shaped semiconductor film 612, an electrode 626which is electrically connected to the gate electrode 614, and anelectrode 627 which is electrically connected to the other of the sourceregion and the drain region of the island-shaped semiconductor film 612are formed (see FIG. 13D). Accordingly, thin film transistors (TFTs) areformed.

Note that in this embodiment mode, the electrodes 621 to 623 and 625 to627 are formed using a stacked layer of three films of a titanium film,an aluminum film, and a titanium film.

Then, the substrate 600 and the entire stacked-layer structure over thesubstrate 600 are heated, hydrogen is released from the interlayerinsulating film 609, the island-shaped semiconductor films 611 and 612are hydrogenated, and thus, dangling bonds in the island-shapedsemiconductor films 611 and 612 are terminated.

Next, an interlayer insulating film 631 formed of a silicon nitride filmis formed to cover the interlayer insulating films 609 and 616 and theelectrodes 621 to 623 and 625 to 627 (see FIG. 14A).

Then, an interlayer insulating film 632 is formed with an organic resin(see FIG. 14B). In this embodiment mode, polyimide is used as a materialof the interlayer insulating film 632. In FIG. 14B, the interlayerinsulating film 632 has an opening portion in a region where theinterlayer insulating film 616 or the base film 603 is not formed. Theopening portion is formed by etching of the interlayer insulating film632. It is acceptable as long as the opening portion is formed before apassivation film 636 described later is formed, and the interlayerinsulating film 632 is not necessarily etched in the step of FIG. 14B.

An antenna 635 which is electrically connected to the electrode 627 isformed over the interlayer insulating film 632 (see FIG. 14C). In thisembodiment mode, the antenna 635 is formed with a stacked layer of atitanium film and an aluminum film.

Next, the passivation film 636 is formed to cover the interlayerinsulating films 631 and 632 and the antenna 635 (see FIG. 15A). Notethat FIG. 25A is the same as FIG. 15A. FIG. 25B is an enlarged view of aportion surrounded by dotted lines in FIG. 25A. FIG. 25C is an enlargedview of a part of the passivation film 636.

The passivation film 636 is a stacked layer of a lower passivation film636 a, a middle passivation film 636 b, and an upper passivation film636 c (see FIG. 25C). In this embodiment mode, a silicon nitride film isformed as the lower passivation film 636 a, an amorphous silicon film isfowled as the middle passivation film 636 b, and a silicon nitride filmis formed as the upper passivation film 636 c. An impurity elementimparting conductivity may be or may not be added to the amorphoussilicon film of the middle passivation film 636 b. As the impurityelement imparting conductivity, phosphorus (P) or arsenic (As) may beused as the impurity element imparting n-type conductivity, and boron(B) may be used as the impurity element imparting p-type conductivity.

An amorphous silicon film having conductivity is used as the middlepassivation film 636 b, whereby electrostatic discharge occurring in theelement can be prevented.

Note that the upper passivation film 636 c is not necessarily formed.

Although the interlayer insulating films 609 and 631 and the passivationfilm 636 are all formed so far, any of these films is not necessarilyformed as appropriate.

FIG. 15B illustrates an example in which the interlayer insulating film609 is not formed. FIG. 16A illustrates an example in which thepassivation film 636 is not formed. FIG. 16B illustrates an example inwhich the interlayer insulating film 631 is not formed.

When any of the stacked-layer structures shown in FIGS. 15A and 15B andFIGS. 16A and 16B is obtained, a sealing layer 641 including a fiber andan organic resin layer is bonded over the antenna 635, the interlayerinsulating films 631 and 632, and the passivation film 636 by pressing(see FIG. 17).

The sealing layer 641 is similar to the sealing layer 305 or the like.The fiber included in the sealing layer 641 is similar to the fiber 113.The organic resin layer included in the sealing layer 641 is similar tothe organic resin layer 114.

Next, an adhesive tape 642 which can be separated by light or heat isprovided over the sealing layer 641. Then, the separation layer 601 isseparated while a roller 645 rotates on the adhesive tape 642 (see FIG.18A), so that the substrate 600 is separated (see FIG. 18B).

At this time, when grooves reaching the separation layer 601 of thesubstrate 600 are formed and a liquid is dropped into the groove in amanner similar to FIG. 1E, separation is more easily performed.

Next, a laser beam 646 is emitted from the side where the insulatingfilm 602 is formed, and grooves 647 are formed in parts of theinsulating film 602, the interlayer insulating films 609 and 631, thepassivation film 636, and the sealing layer 641 (see FIG. 19). Note thatthe adhesive tape 642 may be separated before or after the groove 647 isformed.

Then, a sealing layer 651 including a fiber and an organic resin layeris bonded so as to be in contact with the insulating film 602 bypressing (see FIG. 20A). Accordingly, the organic resin in the sealinglayer 651 enters the groove 647.

Further, a laser beam 653 is emitted to a region between the adjacentgrooves 647 which are provided in a region between elements (see FIG.20B), and a chip is cut out (see FIG. 21).

In addition, an example in which the groove 647 is not formed is shownbelow. First, when the stacked-layer structure shown in FIG. 18B isobtained, the sealing layer 651 including the fiber and the organicresin layer is provided in contact with the insulating film 602 andbonded by pressing (see FIG. 22A).

Further, the laser beam 653 is emitted to a region between elements (seeFIG. 22B), and a chip is cut out (see FIG. 23).

A semiconductor device shown in FIG. 24 is formed in the followingsteps. That is, when the stacked-layer structure shown in FIG. 18B isobtained, the adhesive tape 642 is separated. Next, the laser beam 653is emitted to a region between elements, and a chip is cut out.

Further, an electrode 662 which is electrically connected to the antenna635 is formed by using a conductive adhesive material, over the sealinglayer 641. An adhesive material 663 is formed in a region over thesealing layer 651, which is not provided with the electrode 662.

The chip is bonded to an antenna 665 with the use of the adhesivematerial 663 and the electrode 662 formed using the conductive adhesivematerial. Next, a sealing layer 666 including a fiber and an organicresin layer is bonded to surround the antenna 665 and the chip (see FIG.24).

In this embodiment mode, the interlayer insulating film 631 formed byusing a silicon nitride film and the passivation film 636 are formed,whereby impurity contamination can be suppressed, and stress to bendingcan be relaxed. Accordingly, a semiconductor device with highreliability can be obtained.

Moreover, a TFT can be surrounded by the lower base film 603 a, theupper base film 603 b, and the interlayer insulating film 609, wherebyimpurity contamination can be further suppressed, and a semiconductordevice with higher reliability can be obtained.

This application is based on Japanese Patent Application serial No.2007-232713 filed with Japan Patent Office on Sep. 7, 2007, the entirecontents of which are hereby incorporated by reference.

REFERENCE NUMERALS

41: interlayer insulating film, 42: interlayer insulating film, 43:interlayer insulating film, 51: element layer, 52 a: thin filmtransistor, 52 b: thin film transistor, 53 a: semiconductor layer, 53 b:semiconductor layer, 54: gate insulating layer, 55 a: gate electrode, 55b: gate electrode, 56: insulating layer, 57 a: wiring, 57 b: wiring, 58a: wiring, 58 b: wiring, 61: element layer, 62: memory element, 63:floating gate electrode, 64: tunnel insulating layer, 65: controlinsulating layer, 71: element layer, 72: diode, 73: light receivingportion, 74: electrode, 81: element layer, 82: wiring, 83: electrode,113: fiber, 113 a: warp yarn, 113 b: weft yarn, 113 c: basket hole, 114:organic resin layer, 301: substrate, 302: separation layer, 303:semiconductor element layer, 304: conductive resin, 305: sealing layer,306: groove, 307: roller, 312: opening portion, 313: laser beam, 314:groove, 315: conductive adhesive material, 316: adhesive material, 317:antenna, 318: substrate, 321: chip, 323: sealing layer, 324: fiber, 325:organic resin layer, 411: antenna, 412: circuit portion, 460: powersupply portion, 461: signal processing portion, 462: rectifier circuit,463: storage capacitor, 464: demodulation circuit, 465: clockgeneration/correction circuit, 466: recognition/determination circuit,467: memory controller, 468: mask ROM, 469: encoding circuit, 470:modulation circuit, 501: RFID, 511: bearer bond, 512: certificate, 513:label base (separate paper), 514: label, 515: box, 516: tag, 517: book,600: substrate, 601: separation layer, 602: insulating film, 603: basefilm, 603 a: lower base film, 603 b: upper base film, 607: gateinsulating film, 608: passivation film, 609: interlayer insulating film,611: island-shaped semiconductor film, 612: island-shaped semiconductorfilm, 613: gate electrode, 614: gate electrode, 616: interlayerinsulating film, 621: electrode, 622: electrode, 623: electrode, 625:electrode, 626: electrode, 627: electrode, 631: interlayer insulatingfilm, 632: interlayer insulating film, 635: antenna, 636: passivationfilm, 636 a: lower passivation film, 636 b: middle passivation film, 636c: upper passivation film, 641: sealing layer, 642, adhesive tape, 645:roller, 646: laser beam, 647: groove, 651: sealing layer, 653: laserbeam, 662: electrode, 663: adhesive material, 665: antenna, 666: sealinglayer, 2111: housing, 2112: display portion, 2113: lens, 2114: operatingkey, 2115: shutter button, 2116: semiconductor device, 2121: housing,2122: display portion, 2123: operating key, 2124: optical sensor, 2125:semiconductor device, 2130: main body, 2131: display portion, 2132:semiconductor device, 2133: operation portion, 2134: earphone, 2141:main body, 2142: display portion, 2143: operating key, 2144:semiconductor device

What is claimed is:
 1. A semiconductor device comprising: asemiconductor element; a first sealing layer covering the semiconductorelement at least partly, the first sealing layer including a first fiberand a first organic resin layer; a conductive film electricallyconnected with the semiconductor element with the first sealing layerinterposed between the conductive film and the semiconductor element;and a second sealing layer covering the semiconductor element, thesecond sealing layer including a second fiber and a second organic resinlayer, wherein the semiconductor element is interposed between the firstsealing layer and the second sealing layer, wherein the first sealinglayer and the second sealing layer contact with each other at least at afirst portion and a second portion, the semiconductor element beinglocated between the first portion and the second portion.
 2. Asemiconductor device according to claim 1, wherein in the first fiberand the second fiber, warp yarns and weft yarns in each of which aplurality of single yarns of one of an organic compound and an inorganiccompound are bundled are closely woven.
 3. A semiconductor deviceaccording to claim 1, wherein each of the first fiber and the secondfiber is one of a woven fabric and a nonwoven fabric.
 4. A semiconductordevice according to claim 1, wherein each of the first fiber and thesecond fiber includes one of a polyvinyl alcohol fiber, a polyesterfiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, apolyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbonfiber.
 5. A semiconductor device according to claim 1, wherein each ofthe first organic resin layer and the second organic resin layerincludes one of a thermosetting resin, a thermoplastic resin, and a UVcurable resin.
 6. A semiconductor device according to claim 5, whereinthe thermosetting resin is one of an epoxy resin, an unsaturatedpolyester resin, a polyimide resin, a bismaleimide-triazine resin, and acyanate resin.
 7. A semiconductor device according to claim 5, whereinthe thermoplastic resin is one of a polyphenylene oxide resin, apolyetherimide resin, and a fluorine resin.
 8. A semiconductor deviceaccording to claim 1, wherein the conductive film is an antenna formedover a base material.
 9. A semiconductor device according to claim 8,wherein the antenna includes at least one of silver (Ag), gold (Au),copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta),molybdenum (Mo), titanium (Ti), and aluminum (Al).
 10. A semiconductordevice according to claim 1, wherein the first sealing layer is bondedto the conductive film by an adhesive material.
 11. A semiconductordevice according to claim 1, wherein the semiconductor element iselectrically connected to the conductive film through a conductiveresin.
 12. A semiconductor device according to claim 1, wherein thesemiconductor element includes a thin film transistor.
 13. Asemiconductor device according to claim 1, wherein the second sealinglayer is in contact with the first sealing layer.
 14. A semiconductordevice comprising: a semiconductor element including a transistor; afirst sealing layer covering the semiconductor element at least partly,the first sealing layer including a first fiber and a first organicresin layer; an antenna electrically connected with the semiconductorelement with the first sealing layer interposed between the antenna andthe semiconductor element; and a second sealing layer covering thesemiconductor element, the second sealing layer including a second fiberand a second organic resin layer, wherein the semiconductor element isinterposed between the first sealing layer and the second sealing layer,wherein the first sealing layer and the second sealing layer contactwith each other at least at a first portion and a second portion, thesemiconductor element being located between the first portion and thesecond portion.
 15. A semiconductor device according to claim 14,wherein the first sealing layer is bonded to the antenna by an adhesivematerial.
 16. A semiconductor device according to claim 14, wherein thesemiconductor element is electrically connected to the antenna through aconductive resin.
 17. A semiconductor device according to claim 14,wherein the first fiber includes a carbon fiber.
 18. A semiconductordevice according to claim 14, wherein the second fiber includes a carbonfiber.
 19. A semiconductor device according to claim 14, wherein each ofthe first organic resin layer and the second organic resin layerincludes one of a thermosetting resin, a thermoplastic resin, and a UVcurable resin.
 20. A semiconductor device according to claim 14, whereinthe antenna includes at least one of silver (Ag), gold (Au), copper(Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta),molybdenum (Mo), titanium (Ti), and aluminum (Al).